| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the resistance of a gate electrode, a source area and a drain area can easily be reduced in a transistor where extension areas are asymmetric against the gate electrode. SOLUTION: A field effect transistor including N-extension areas 3a and 3b, an N+drain area 2, an N+source area 4 and the gate electrode 6 is formed on the surface of a silicon substrate 1. A sidewall insulating film 8 formed on one side of the gate electrode 6 covers a part of the surface of the N- extension area 3a, and the sidewall insulating film 8 formed on one side covers the whole face of the N-extension area 3b. A silicon oxidized film 7 covers the surface of the N-extension area 3a which is not covered by the sidewall insulating film 8.
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