发明名称 METHOD FOR MANUFACTURING PHASE SHIFT MASK
摘要 PURPOSE: A fabrication method of a phase shift mask is provided to improve a productivity by compensating for a phase difference and a transmittance between a carbon film deposited on a clear defect portion and a normal pattern. CONSTITUTION: When a clear defect is generated in mask manufacturing processes, a carbon film(60) is deposited on clear defect portions of a quartz substrate(10). A carbon hole is formed at center portion of the deposited carbon film(60) in order to have a phase difference of 180 degree with a normal transmitting pattern. A quartz hole(90) is then formed by selectively etching the exposed quartz substrate(10) using the carbon hole.
申请公布号 KR20020088665(A) 申请公布日期 2002.11.29
申请号 KR20010027467 申请日期 2001.05.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JU HWAN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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