发明名称 METHOD FOR FORMING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a uniform thin film on a surface of base substance to be treated in a normal pressure plasma CVD method. SOLUTION: In a method for forming a thin film on the surface of the base substance, treatment gas is introduced between a pair of facing planes parallel plane electrodes wherein at least one facing surface is coated with solid dielectrics, under a pressure approximate to an atmospheric pressure, and discharge plasma which is obtained by applying a pulsed electric field between a pair of the electrodes is brought into contact with the base substance. The plasma is jetted from plasma gas jetting ports of the parallel plane electrodes against the rotated base substance and is brought into contact with the surface of the base substance. Thereby the thin film is formed on the surface of the base substance.
申请公布号 JP2002343725(A) 申请公布日期 2002.11.29
申请号 JP20010149232 申请日期 2001.05.18
申请人 SEKISUI CHEM CO LTD 发明人 KITAHATA HIRONARI
分类号 H05H1/46;B01J19/08;B05D3/04;C23C16/515;H01L21/205 主分类号 H05H1/46
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