SILICON EMITTER HAVING HEAVILY DOPED CONTACT LAYER WITH LOW POROSITY

摘要

PROBLEM TO BE SOLVED: To provide a porous silicon emitter reduced in series contact resistance between an active porous silicon layer and an electrode. SOLUTION: The porous silicon made emitter comprises an electron injection layer 1 including a front face 2 and a back face 4, an active layer 3 comprising a porous silicon material, having high porosity contacting the front face 2, the contact layer 5 contacting the active layer 3 and comprising a porous silicon material with low porosity which includes a boundary surface 12, and an n-type heavily-doped region 8 extending inside the boundary surface 12. The n-type heavily doped region 8 which low resistivity.