| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin film transistor having a superior characteristic without shape failures in a gate insulating film. SOLUTION: The manufacturing method of a thin film transistor has a process for forming an amorphous silicon film on a substrate 11, a process for working the amorphous silicon film on the polycrystalline silicon film 13, a process for working the polycrystalline silicon film 13 into a land-like polycrystalline silicon film, and a process for forming a gate insulating film 14. The amorphous silicon film is worked to the polysilicon film 13, the oxidized film on the surface of the polycrystalline silicon film 13 is removed, and a water repellent state is made. An oxidized coating 21 is formed on the polycrystalline silicon film 13 immediately after, and it is worked into the land- like polycrystalline silicon film. Then, the oxidized coating 21 is removed before the gate insulating film 14 is formed.
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