| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mask on which a fine pattern is formed with high accuracy, its producing method and a method for fabricating a semiconductor device. SOLUTION: The mask comprises a silicon single crystal film 107 having a (100) face in parallel with the surface, a thin film 103 including the silicon single crystal film 107, a hole 105 for passing a charged particle beam, a (111) face defining the wall face of the hole 105 and can delay the etching rate as compared with the (100) face, and conductive layers 121, 122 and 123 for supporting the thin film formed thereon. A method for producing the mask and a method for fabricating a semiconductor device are also provided.</p> |
