SEMICONDUCTOR DEVICE AND PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To simultaneously realize reduction of capacitance formed by a gate wire 101 and a signal wire 102 and reduction of wiring resistance of each of the gate wire 101 and the signal wire 102. SOLUTION: In a semiconductor device having a thin film field effect transistor(TFT) 202, an overlapping part is arranged wherein the gate wire 101 for applying a driving potential to the TFT 202 and the signal wire 102 for reading an output of the TFT 202 are overlapped separately. In the overlapping part, at least one wire width of the respective wire is made smaller than that in a region except the overlapping part.