| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment wherein material gas can be made to flow uniformly on a semiconductor substrate, and a method for manufacturing compound semiconductor. SOLUTION: In this semiconductor manufacturing equipment for manufacturing compound semiconductor by using an MOCVD method, an introduction member 4 is installed which is used for introducing the material gas supplied from a material gas supplying device toward a surface of a semiconductor substrate arranged in a reaction device. A main body 41 of the introduction member 4 is made a hollow member, a material gas conducting path for conducting the material gas in the X direction is installed, a plurality of aperture parts 48 are installed, and the material gas in the material gas conducting path is jetted from the aperture parts 48 toward the Y direction perpendicular to the X direction. Thereby the semiconductor substrate is dipped in the material gas flow of uniform amount which is jetted from the introduction member 4.
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