| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor for a semiconductor element and its manufacturing method which can manufacture the capacitor proper to a highly integrated memory element by using the TaON dielectric film of high dielectric constant. SOLUTION: The method comprises a step for providing a semiconductor substrate, a step for forming a lower electrode having MPS (Meta-Stable-Silicon) 35 on the semiconductor substrate, a step for performing thermal doping at 550 to 660 deg.C and in the atmosphere of gaseous phosphor (P), a step for forming a TaON dielectric film 37 on the lower electrode, and a step for forming an upper electrode 39 on the TaON dielectric film. |
