| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which the mobility of both electrons and holes can be enhanced simply and cheaply using a conventional silicon single-crystal substrate, a semiconductor device using the substrate, and to provide a method of manufacturing the semiconductor device. SOLUTION: This semiconductor substrate is constituted such that an SiGe layer in which strain is contained is stacked on a silicon substrate, wherein a region of the SiGe layer has, in a part of the layer, a defect layer which is generated by the introduction of an electrically neutral element. The strain is contained in the part below the defect layer while the strain is relaxed in the part above the defect layer.
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