| 摘要 |
PROBLEM TO BE SOLVED: To avoid the deterioration of a dielectric strength, a short circuit between electrodes, and an open circuit in a semiconductor device in which a polycrystalline silicon layer is used. SOLUTION: An oxide film (2) is formed on a semiconductor substrate (1). An amorphous silicon layer (4) is formed on a surface of a polycrystalline silicon layer (3) formed on the oxide film (2) to form a deposited double-layer structure. By utilizing a difference in etching rate between the polycrystalline silicon (3) and the amorphous silicon (4), a tapered shape is formed.
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