| 摘要 |
<p>A first contact hole (6) penetrating a gate insulation film (5) is formed, a gate electrode (7g) is formed on the gate insulation film (5), and at the same time first contact holes (7s, 7d) are formed in the first contact hole. A second contact hole (9) penetrating an interlayer insulation (8) film is formed, and a second contact (10) is formed in the second contact hole (9). A third contact hole (11) penetrating a flatten film (26) is formed, and an electrode (40) is formed in the third contact hole (11). Since a plurality of contact holes for electrically connecting the electrode (40) with a semiconductor film (3) are used, the aspect ratio of each contact hole can be decreased, a yield can be enhanced, and a high integration can be realized due to a reduction in area difference between the top and bottom faces of a contact.</p> |
