| 摘要 |
<p>A thin-film characteristic measuring method using spectroellipsometer wherein a combination model of the thicknesses of the layers and complex refractive index is made, fitting with a measured spectrum is repeated finitely by varying the model and angle of incidence, and thereby the thin film structure and the dependence of the dielectric constant on wavelength are determined with high accuracy. A method for determining the composition of a compound semiconductor layer on a substrate wherein a combination model of the thicknesses of the layers and complex refractive index is made, fitting with a measured spectrum is repeated finitely by varying the model and angle of incidence, and thereby the thin film structure, the dependence of the dielectric constant on wavelength, and composition ratio are determined with high accuracy. A method for determining the composition of a polycrystalline compound semiconductor using a spectroellipsometer wherein the concentration of atoms of interest in a polycrystalline compound semiconductor is finally determined from data collected using an ellipsometer by a novel approximate calculation method.</p> |
