发明名称 Quantum dot vertical cavity surface emitting laser
摘要 A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.
申请公布号 US2002176474(A1) 申请公布日期 2002.11.28
申请号 US20020087408 申请日期 2002.03.01
申请人 HUANG XIAODONG;STINTZ ANDREAS;MALLOY KEVIN;LIU GUANGTIAN;LESTER LUKE;CHENG JULIAN 发明人 HUANG XIAODONG;STINTZ ANDREAS;MALLOY KEVIN;LIU GUANGTIAN;LESTER LUKE;CHENG JULIAN
分类号 H01L29/06;H01S5/042;H01S5/12;H01S5/14;H01S5/183;H01S5/34;H01S5/40;(IPC1-7):H01S5/183 主分类号 H01L29/06
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