Method of forming void-free intermetal dielectrics

摘要

An HDPCVD oxide layer is deposited over metal lines on a semiconductor substrate. The HDPCVD oxide layer so deposited has ridged portions over the metal lines. The HDPCVD oxide layer is then treated in-situ with an inert gas or reactive gas plasma to remove the ridged portions on the surface. A sacrificial dielectric layer can then be deposited on the HDPCVD oxide layer with good step coverage, thereby to eliminate voids.