| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of increasing integration degree by minimizing an isolation width between devices. CONSTITUTION: A protrusion part is formed by selectively etching a silicon substrate(11). A nitride spacer(12) is formed at both sidewalls of the protrusion part. An oxide layer(13) is selectively deposited on the silicon substrate and the nitride spacer. The nitride spacer(12) is then removed. A trench is formed by etching the silicon substrate(11) using the oxide layer(13) as a buffer layer. An isolation layer is formed by filling an HLD(High temperature and Low pressure Dielectric) layer(14) into the trench and etch back of the HLD layer.
|
