| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to effectively reduce bird's beak and to remove stress of a substrate by preventing direct contact between the substrate and a nitride layer. CONSTITUTION: The first and second insulating pattern(100,102) are sequentially stacked on an active region of a semiconductor substrate. The exposed isolation region is partially etched. After sequentially depositing the third and fourth insulating layer on the resultant structure, spacers(103,104) are formed at sidewalls of the active pattern and the etched substrate. The isolation region of the substrate is secondly etched. Then, a field oxide layer(105) is formed by field oxidation.
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