发明名称 |
Magnetic random access memory using bipolar junction transistor, and method for fabricating the same |
摘要 |
A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.
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申请公布号 |
US2002175386(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020127364 |
申请日期 |
2002.04.22 |
申请人 |
KIM CHANG SHUK;KANG HEE BOK;LEE SUN GHIL |
发明人 |
KIM CHANG SHUK;KANG HEE BOK;LEE SUN GHIL |
分类号 |
G11C11/15;G11C11/16;G11C11/56;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):H01L29/82 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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