TWO-MASK TRENCH SCHOTTKY DIODE

摘要

A Schottky rectifier includes a semiconductor structure having first and second opposing faces (12a and 12b, respectively) each extending to define an active semiconductor region (5) and a termination semiconductor region (10). The structure includes a cathode region (12c) and a drift region (12d) of the first conductivity type adjacent the first and second faces, respectively. The drift region has a lower net doping concentration than that of the cathode region. A plurality of trenches (30) extends from the second face into the semiconductor structure and defines a plurality of mesas (14) therein. At least one of the trenches is located in each of the active and the terminal semiconductor regions. A first insulating region (16) is located adjacent the structure in the plurality of trenches. A second insulating region (45) electrically isolated the active semiconductor region from the terminal semiconductor region. An anode electrode (18) is adjacent to and forms a Schottky rectifying contact with the structure at the second face and is adjacent to the first insulating region in the trenches. The anode electrode electrically connects together the plurality of trenches.