发明名称 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
摘要 |
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
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申请公布号 |
US2002175408(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020112578 |
申请日期 |
2002.03.29 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
MAJUMDAR ARUN;SHAKOURI ALI;SANDS TIMOTHY D.;YANG PEIDONG;MAO SAMUEL S.;RUSSO RICHARD E.;FEICK HENNING;WEBER EICKE R.;KIND HANNES;HUANG MICHAEL;YAN HAOQUAN;WU YIYING;FAN RONG |
分类号 |
B82B1/00;B82B3/00;G02B6/10;H01L21/20;H01L23/49;H01L29/06;H01L29/12;H01L33/06;H01L33/24;H01L35/00;H01L41/09;H01L41/18;H01S5/34;(IPC1-7):H01L23/48 |
主分类号 |
B82B1/00 |
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