发明名称 Method of forming a damascene structure using a sacrificial conductive layer and the structure so formed
摘要 A method of forming a damascene structure, and the structure so formed, using a sacrificial conductive layer to provide a uniform focus plane for the photolithography tool during formation of circuit features. In particular, a metal layer is provided between the insulative layer and the photoresist, upon which the capacitive sensors of the photolithography tool focus during the formation of the circuit features, namely, troughs and vias.
申请公布号 US2002177301(A1) 申请公布日期 2002.11.28
申请号 US20020195763 申请日期 2002.07.15
申请人 BIOLSI PETER E.;JANKOWSKI GREGORY S.;KRYWANCZYK LAURIE M.;STAMPER ANTHONY K. 发明人 BIOLSI PETER E.;JANKOWSKI GREGORY S.;KRYWANCZYK LAURIE M.;STAMPER ANTHONY K.
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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