发明名称 |
Device improvement by lowering LDD resistance with new silicide process |
摘要 |
A method is provided for fabricating a semiconductor device on a structure, the method including forming a dielectric layer adjacent a gate conductor of the semiconductor device and above an LDD region of the structure and removing a first portion of the dielectric layer above the gate conductor and above the LDD region. The method also includes forming a first conductive layer above the gate conductor, adjacent the dielectric layer and above the LDD region and saliciding the first conductive layer above the gate conductor and above the LDD region to form a salicided first conductive layer.
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申请公布号 |
US2002175371(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20010195566 |
申请日期 |
2001.04.16 |
申请人 |
HAUSE FREDERICK N.;HORSTMANN MANFRED;WIECZOREK KARSTEN |
发明人 |
HAUSE FREDERICK N.;HORSTMANN MANFRED;WIECZOREK KARSTEN |
分类号 |
H01L21/336;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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