发明名称 |
Process of forming metal surfaces compatible with a wire bonding and semiconductor integrated circuits manufactured by the process |
摘要 |
The present invention relates to the structure and process of forming metal surfaces on the bare metal interconnect of a semiconductor chip. The metal chip comprises metal interconnect formed on a semiconductor substrate and at least a portion of the metal interconnect is exposed to the environment. In one aspect of the invention, the process comprises applying a noble metal on the exposed portion of the metal interconnect and performing a chemical process that causes a layer of the noble metal to convert into a bondable layer compatible with a conventional wire bonding. The process also comprises bonding a metal wire to the bondable layer.
|
申请公布号 |
US2002175424(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020078243 |
申请日期 |
2002.02.14 |
申请人 |
KRIPESH VAIDYANATHAN;IYER MAHADEVAN K.;LIM THIAM BENG |
发明人 |
KRIPESH VAIDYANATHAN;IYER MAHADEVAN K.;LIM THIAM BENG |
分类号 |
H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/485 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|