发明名称 Process of forming metal surfaces compatible with a wire bonding and semiconductor integrated circuits manufactured by the process
摘要 The present invention relates to the structure and process of forming metal surfaces on the bare metal interconnect of a semiconductor chip. The metal chip comprises metal interconnect formed on a semiconductor substrate and at least a portion of the metal interconnect is exposed to the environment. In one aspect of the invention, the process comprises applying a noble metal on the exposed portion of the metal interconnect and performing a chemical process that causes a layer of the noble metal to convert into a bondable layer compatible with a conventional wire bonding. The process also comprises bonding a metal wire to the bondable layer.
申请公布号 US2002175424(A1) 申请公布日期 2002.11.28
申请号 US20020078243 申请日期 2002.02.14
申请人 KRIPESH VAIDYANATHAN;IYER MAHADEVAN K.;LIM THIAM BENG 发明人 KRIPESH VAIDYANATHAN;IYER MAHADEVAN K.;LIM THIAM BENG
分类号 H01L23/485;(IPC1-7):H01L23/48 主分类号 H01L23/485
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