发明名称 SEMICONDUCTOR PROCESSING EQUIPMENT HAVING RADIANT HEATED CERAMIC LINER
摘要 A plasma processing chamber including a ceramic liner heated by radiant heating. The liner can be a series of tiles or a continuous cylindrical liner. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. To remove excess heat from the liner, the ceramic liner can be supported on a resilient aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.
申请公布号 WO0122478(A9) 申请公布日期 2002.11.28
申请号 WO2000US24866 申请日期 2000.09.11
申请人 LAM RESEARCH CORPORATION;KENNEDY, WILLIAM, S.;MARASCHIN, ROBERT, A.;WICKER, THOMAS, E. 发明人 KENNEDY, WILLIAM, S.;MARASCHIN, ROBERT, A.;WICKER, THOMAS, E.
分类号 H05H1/46;B01J19/02;B01J19/08;C04B35/565;C23C16/44;H01L21/00;H01L21/3065;(IPC1-7):H01L21/00 主分类号 H05H1/46
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