发明名称 |
Novel high-K dielectric materials and processes for manufacturing them |
摘要 |
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.
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申请公布号 |
US2002177268(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020188682 |
申请日期 |
2002.07.02 |
申请人 |
LU JIONG-PING;HWANG MING-JANG |
发明人 |
LU JIONG-PING;HWANG MING-JANG |
分类号 |
H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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