Method for forming a gate dielectric layer by a single wafer process

摘要

A method for forming a gate dielectric layer by a single wafer process is provided. The method for forming a gate dielectric layer by a single wafer process is accomplished by two steps respectively performed in a single-wafer chamber and a single-wafer rapid thermal processing (RTP) chamber. First, by placing a silicon wafer in the single-wafer chamber and performing a nitridation process to form a nitrogen-contained silicon oxide layer on the surface of the silicon wafer. Then, placing the silicon wafer in the single-wafer RTP chamber and performing an in-situ steam generation (ISSG) oxidation process to oxidize the nitrogen-contained silicon oxide layer to a silicon oxide layer with an oxynitride bottom layer serving for a gate dielectric layer.