发明名称 |
Semiconductor light-detecting element |
摘要 |
A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation density of 1011/cm2 or below. The light-detecting element structure is made of a nitride semiconductor layer group including Al element at a larger content than the nitride semiconductor making the underlayer with a dislocation density of 1010/cm2 or below.
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申请公布号 |
US2002175389(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020147046 |
申请日期 |
2002.05.17 |
申请人 |
NGK INSULATORS, LTD |
发明人 |
SHIBATA TOMOHIKO;ASAI KEIICHIRO;SUMIYA SHIGEAKI;TANAKA MITSUHIRO |
分类号 |
H01L31/10;H01L21/20;H01L31/0304;H01L31/105;H01L31/18;(IPC1-7):H01L31/075;H01L31/117 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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