Semiconductor light emitting device and manufacturing method thereof

摘要

On a semiconductor substrate (1), a double hetero structure portion (6) in which an active layer (4) having smaller band gap is sandwiched between semiconductor layers (3, 5) having larger band gap than that of the active layer (4) is formed. A light reflection film (9) is formed at least a part of side walls of the double hetero structure portion (6). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.