发明名称 |
Method for sealing via sidewalls in porous low-k dielectric layers |
摘要 |
A method for completing an integrated circuit in the horizontal surface of a semiconductor substrate having interconnecting metal lines, comprising the steps of forming a dielectric layer over a said substrate; etching a substantially vertical hole into said dielectric layer so that it exposes one of said metal lines; depositing a barrier layer over said structure including within said hole, said barrier layer operable to seal said dielectric sidewalls of said structure; selectively removing said barrier layer from the bottom of said hole, thereby exposing said metal line; and forming a copper interconnect structure in said structure, contacting said metal line.
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申请公布号 |
US2002177303(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20010863687 |
申请日期 |
2001.05.23 |
申请人 |
JIANG QING-TANG;BRENNAN KENNETH D. |
发明人 |
JIANG QING-TANG;BRENNAN KENNETH D. |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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