Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile

摘要

A method for controlling critical dimensions of a feature formed on a semiconductor wafer includes illuminating the wafer; measuring light reflected off the wafer to generate a profile trace; comparing the profile trace to a target profile trace; and modifying an operating recipe of a processing tool used to form the feature based on a deviation between the profile trace and the target profile trace. A processing line includes a processing tool, a scatterometer, and a process controller. The processing tool is adapted to form a feature on a semiconductor wafer in accordance with an operating recipe. The scatterometer is adapted to receive the wafer. The scatterometer includes a light source adapted to illuminate the wafer and a light detector adapted to measure light from the light source reflected off the wafer to generate a profile trace. The process controller is adapted to compare the profile trace to a target profile trace, and modify the operating recipe of the processing tool based on a deviation between the profile trace and the target profile trace.