发明名称 Low reflectivity grating
摘要 This narrow-band coherent light, (light that is virtually all in-phase and at, or essentially at, the same wavelength) grating-coupled, diode-chip-laser improvement enables, for the first time, combining the functional advantages of non-semiconductor-chip (e.g., fluid) lasers with the efficiency, economy, and convenience of semiconductor-chip-manufacturing (wafer processing), while providing significantly higher power than prior art semiconductor-chip diodes. It utilizes a manufacturable grating that couples output light "vertically" out of a horizontal, active-region-containing core, and generally minimizes reflections that would cause loss and noise. All reflections from the grating back into the active region are essentially eliminated (to less than 0.1% and preferably less than 0.01% of the light diffracted out of said structure). Integrated gratings can also be constructed in a manner to produce other optical functions, similar to any of the modifications that have been done in fluid lasers, but manufactured as part of the solid-state diode.
申请公布号 US2002176463(A1) 申请公布日期 2002.11.28
申请号 US20020104333 申请日期 2002.03.22
申请人 BULLINGTON JEFF A.;STOLTZ RICHARD A.;SMOLSKI OLEG V. 发明人 BULLINGTON JEFF A.;STOLTZ RICHARD A.;SMOLSKI OLEG V.
分类号 G02B6/124;G02B6/42;H01S5/00;H01S5/042;H01S5/12;H01S5/14;H01S5/187;H01S5/20;(IPC1-7):H01L21/00 主分类号 G02B6/124
代理机构 代理人
主权项
地址