SEMICONDUCTOR TILING STRUCTURE AND METHOD OF FORMATION

摘要

A semiconductor device and method of fabrication are disclosed. The device includes a first trench isolation region having an allowable tiling area and a second trench isolation region having an allowable tiling area, wherein the second trench isolation region is doped differently from the first trench isolation region. First tile structures disposed within first trench isolation region have a first set of design parameters while second tile structures disposed within the second trench isolation region have a second set of design parameters. At least one of the first set of design parameters is different from a corresponding design parameter in the second set of design parameters. The corresponding design parameters may include the density, size, pitch, shape, exclusion distance, minimum width, minimum length, and minimum area. The first trench isolation region may be doped with a first-type dopant and the second trench isolation region may be undoped or doped with an opposite second-type dopant.