| 摘要 |
PURPOSE: A method for forming an interconnection in a semiconductor device is provided to simplify manufacturing processes without using metal deposition and etch processes and to easily control the line-width of the interconnection. CONSTITUTION: Metal particles are generated in a particle generation chamber(21). The first acceleration energy is applied to the metal particles by an acceleration apparatus(22). The accelerated metal particles are sprayed into a silicon substrate(11) via a nozzle(26). Thereby, a metal line(25) is formed on the silicon substrate(11) by controlling aperture of the nozzle(26).
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