发明名称 Charged particle processing for forming pattern boundaries at a uniform thickness
摘要 In the processing method of the present invention, there is implemented irradiation with a charged particle beam in such a manner that, when executing processing in a uniform manner, when deposition processing or etching processing of a prescribed pattern is carried out using a charged particle beam apparatus, a region of the pattern to be processed is divided up into microscopic regions corresponding to the diameter of the beam, and regulation is performed by scanning circuits etc. with processing proceeding simultaneously for a plurality of patterns within the scanning region in such a manner that the dose amount for each microscopic region becomes equal.
申请公布号 US2002177055(A1) 申请公布日期 2002.11.28
申请号 US20010016830 申请日期 2001.12.13
申请人 HAGIWARA RYOJI;KOZAKAI TOMOKAZU 发明人 HAGIWARA RYOJI;KOZAKAI TOMOKAZU
分类号 G21K5/04;C23C16/48;G03F1/00;G03F1/08;G03F1/54;H01J37/30;H01J37/317;H01L21/302;H01L21/31;(IPC1-7):G03C5/00;A61N5/00;G21G5/00 主分类号 G21K5/04
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