| 摘要 |
A low voltage boost circuit suitable for use in a ferroelectric memory is realized implementing five N-channel devices and two ferroelectric capacitors. The voltage on a word line is boosted using charge sharing techniques in order to assure proper operation at lower power supply voltage conditions. In operation, the gate of an N-channel pass gate is boosted to supply a full VDD voltage on the bottom electrode of a ferroelectric capacitor, which capacitively couples into the word line for an efficient word line voltage boost.
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