| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor substrate, by which dislocations in a nitride semiconductor layer on the substrate can be reduced easily and uniformly over the whole surface of the substrate, and to provide the nitride semiconductor substrate. SOLUTION: The nitride semiconductor substrate 10 is composed of a GaN layer 2 being a first nitride layer, formed on the surface of a sapphire substrate 1 having (0001) plane or a plane direction inclined by several degrees from the (0001) plane, a plurality of protruded nuclei 5 composed of GaN being a second nitride, formed on the GaN layer 2, and a GaN layer 7 being a third nitride layer, formed on the GaN layer 2 and the protruded nuclei 5. The method of producing the nitride semiconductor substrate 10 comprises growing the GaN layer 2 on the sapphire substrate 1, then growing the protruded nuclei 5 on the GaN layer 2, and growing the GaN layer 7 on the GaN layer 2 and the protruded nuclei 5.
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