METHOD AND SYSTEM FOR FABRICATING III-V GROUP COMPOUND SEMICONDUCTOR AND III-V GROUP COMPOUND SEMICONDUCTOR

摘要

PURPOSE: A III-V group compound semiconductor is provided to increase the content of III group elements in a GaN-based mixture crystal and improve doping efficiency of elements by blowing individually supplied raw material gas toward a substrate while using blow gas. CONSTITUTION: A lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor. A main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in a prescribed direction and is formed with multiple orifices. The fed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this way. A pressure differential produced between the inner side and outer side of a nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably form desired thin film crystal.