| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing an epitaxial wafer, by which a silicon single crystal thin film is prevented from being rapidly stuck with impurities such as metal particles onto its surface, and to provide a vapor growth device. SOLUTION: A surface oxide film is formed by exposing the surface of the silicon epitaxial wafer, obtained by epitaxially growing a single crystal thin film on the main surface of a silicon single crystal substrate in a vapor phase, to a ozone-containing gas in which oxygen is contained in a concentration lower than the lower explosive limit of hydrogen.
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