SEMICONDUCTOR PRESSURE SENSOR

摘要

PROBLEM TO BE SOLVED: To suppress the variation of an output of as diaphragm type semiconductor pressure sensor using a semiconductor substrate having a main surface to be the (100) face due to the creep stress of metal wirings even when the detectable pressure is intended to be very low. SOLUTION: A pressure detecting diaphragm 12, diffused gage resistances Rc, Rs for outputting a detection signal based on the resistance change due to the strain of the diaphragm 12 and metal wirings 21-24 for on an outer thick walled portion of the diaphragm 12 are formed on a main surface 11 being the (110) face of a rectangular plate-like silicon substrate 10 and the ratio of the diaphragm area S (μm<2> ) to the thickness d (μm), S/D, is greater than 100μm. The area of portions of the metal wirings 21-24 located at a first parallel side 10a of the substrate 10 to a crystal axis <110> is greater than that of their portions located at a second parallel side 10b to the axis <110>.