| 摘要 |
PROBLEM TO BE SOLVED: To provide a high purity silicon carbide heating element having non-staining property and useful as heaters of various devices used in the semiconductor field or the like, required to be strictly kept free from contamination, and a method of producing the same. SOLUTION: The high purity silicon carbide heating element is formed from a silicon carbide sintered compact which is produced by mixing 60 to 80 wt.% high purity α-type silicon carbide powder A having an average particle diameter of <=100 μm and containing Fe in an amount of <=10 ppm, 10 to 20 wt.% high purity α-type silicon carbide powder B having an average particle diameter of <=2 μm and containing Fe in an amount of <=30 ppm, and 10 to 20 wt.% α-type silicon carbide powder C having an average particle diameter of <=1 μm and containing Fe in an amount of <=200 ppm to obtain a silicon carbide mixed powder, then adding water to the silicon carbide mixed powder, kneading, slip casting the resulting slurry to obtain a formed body, firing the formed body under a non-oxidizing atmosphere at 1,800 to 2,200 deg.C, and subjecting the sintered compact to acid treatment to dissolve and remove impurities. It is preferable that the silicon carbide sintered compact contains Fe in an amount of <=10 ppm, and has physical properties that the electrical specific resistance at room temperature is <=0.1 Ω.cm and the density is >=2.5 g/cm<3> . |
