| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used for microphotofabrication using far-UV rays, and particularly ArF excimer laser light and which causes little roughening of the surface during etching and shows preferable edge roughness and little shrinkage during observation by an SEM. SOLUTION: The positive resist composition contains (A) a resin which contains a specified repeating unit having hydroxyadamantyl groups and increases the dissolving rate with an alkali developer by the effect of an acid and (B) a compound which produces an acid by irradiation of active rays or radiation. |
