| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high energy rays and excels in the sensitivity at a wavelength of <=200 nm, particularly <=170 nm, resolution, and plasm etching resistance, accordingly can particularly be a resist material having a small absorption at the exposure wavelength by an F2 excimer laser due to these properties, thus can easily form a fine pattern and, in addition, perpendicular to the substrate, and is suitable, for this account, as the fine pattern-forming material for manufacturing VLSI. SOLUTION: The polymer compound has a repeating unit to be represented by formula (1) (wherein R<1> is a single bond or a 1-10C linear, branched or cyclic divalent hydrocarbon group and may be a bridge-containing cyclic divalent hydrocarbon group; R<2> is an acid unstable group; R<3> is a fluorine atom or a 1-10C linear, branched or cyclic fluorinated alkyl group; 1<=m<=3, 1<=n<=4; and m+n<=5). |
