发明名称 POLYMER COMPOUND, RESIST MATERIAL, AND PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polymer compound which is sensitive to a high-energy ray, is excellent in sensitivity, resolution, and etching resistance, and hence is useful for fine processing using an electron beam or ultraviolet rays. SOLUTION: This polymer compound has a wt. average mol.wt. of 1,000-500,000 and contains repeating units represented by formulas (1) and (2) [W is a 2-15C divalent group and forms, together with the carbon atom to which W is bonded, a 5- or 6-membered cyclic ketone, lactone, cyclic carbonate, cyclic acid anhydride, or cyclic imide; Y is O or NR<1> (R<1> is H or a 1-15C linear, branched or cyclic alkyl group); and k is 0 or 1] and at least one kind of unit decomposable under acidic conditions to generate a carboxylic acid.
申请公布号 JP2002338633(A) 申请公布日期 2002.11.27
申请号 JP20010150535 申请日期 2001.05.21
申请人 SHIN ETSU CHEM CO LTD 发明人 NISHI TSUNEHIRO;KOBAYASHI TOMOHIRO
分类号 G03F7/039;C08F220/10;C08F222/06;C08F222/10;C08F222/40;C08F232/08;G03F7/004;H01L21/027 主分类号 G03F7/039
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