发明名称 ACTIVE MATRIX SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To improve a manufacturing method for an active matrix substrate used for an active matrix type liquid crystal display device. SOLUTION: On a substrate, a pixel part including a thin-film transistor as a switch and a peripheral circuit part constituted including a thin-film transistor are formed, and the thin-film transistor of the pixel part has an LDD structure. This manufacturing method for the active matrix substrate has a process of implanting ions to low density by using the gate electrode as a mask to anodize the gate electrode and further implanting ions to higher density.</p>
申请公布号 JP2002341386(A) 申请公布日期 2002.11.27
申请号 JP20020065966 申请日期 2002.03.11
申请人 SEIKO EPSON CORP 发明人 INOUE SATOSHI
分类号 G02F1/1368;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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