发明名称 |
Method to prevent disturbances during the erasing phase in a non-volatile memory device |
摘要 |
<p>The invention concerns a method of avoiding disturbance during an erasing steps of an electrically programmable and erasable, semiconductor integrated non-volatile memory device, which comprises a matrix of memory cells divided into sectors. An operation of parallel erasing several sectors of the matrix as well as an operation of verifying the erasing of each sector in the matrix are carried out. <IMAGE></p> |
申请公布号 |
EP1260989(A2) |
申请公布日期 |
2002.11.27 |
申请号 |
EP20020015769 |
申请日期 |
1996.04.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
DALLABORA, MARCO;VILLA, CORRADO;BARTOLI, SIMONE;DEFENDI, MARCO |
分类号 |
G11C16/10;G11C16/16;G11C16/34;(IPC1-7):G11C16/16 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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