发明名称 MANUFACTURING METHOD OF THERMAL INFRARED SOLID-STATE IMAGE SENSOR, AND THERMAL INFRARED SOLID-STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a thermal infrared solid-state image sensor with a high infrared detection sensitivity and a short thermal time constant. SOLUTION: In this thermal infrared solid-state image sensor provided with a detection part and a signal processing part for processing a signal transmitted from the detection part, which are provided on the same silicon substrate, the thickness of the insulating film of the detection part is set smaller than that of the interlayer separation layer of the signal processing part.
申请公布号 JP2002340684(A) 申请公布日期 2002.11.27
申请号 JP20010147906 申请日期 2001.05.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 OTA YASUAKI;OZASAYAMA YASUHIRO;SONE TAKANORI
分类号 G01J1/42;G01J5/48;H01L27/14;H01L35/00;H01L37/02;H04N5/33;H04N5/335;H04N5/369;(IPC1-7):G01J5/48 主分类号 G01J1/42
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