发明名称 SOLUTION FOR PRODUCING OXIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a solution for producing an oxide crystal, with which it is possible to improve the crystallinity of the oxide crystal when the oxide crystal having a Y123-type crystal structure is grown from a solution phase. SOLUTION: The solution is used for producing the oxide crystal by growing the oxide crystal having the Y123-type crystal structure from the solution phase by a liquid phase method. The solvent (melt) composition forming the solution phase is made to be a BaO-CuO-BaF2 system, and the atomic ratio of Ba to Cu is adjusted to be in the range of 42:58 to 20:80. Thereby, it becomes possible to lower the temperature at growing the crystal.
申请公布号 JP2002338393(A) 申请公布日期 2002.11.27
申请号 JP20010144534 申请日期 2001.05.15
申请人 CHUBU ELECTRIC POWER CO INC;INTERNATL SUPERCONDUCTIVITY TECHNOLOGY CENTER 发明人 SUGA TOSHIHIRO;YAMADA YASUSHI;HIRABAYASHI IZUMI
分类号 C30B29/22;C30B17/00;C30B19/04;H01L21/208;(IPC1-7):C30B29/22 主分类号 C30B29/22
代理机构 代理人
主权项
地址