发明名称 |
SOLUTION FOR PRODUCING OXIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a solution for producing an oxide crystal, with which it is possible to improve the crystallinity of the oxide crystal when the oxide crystal having a Y123-type crystal structure is grown from a solution phase. SOLUTION: The solution is used for producing the oxide crystal by growing the oxide crystal having the Y123-type crystal structure from the solution phase by a liquid phase method. The solvent (melt) composition forming the solution phase is made to be a BaO-CuO-BaF2 system, and the atomic ratio of Ba to Cu is adjusted to be in the range of 42:58 to 20:80. Thereby, it becomes possible to lower the temperature at growing the crystal.
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申请公布号 |
JP2002338393(A) |
申请公布日期 |
2002.11.27 |
申请号 |
JP20010144534 |
申请日期 |
2001.05.15 |
申请人 |
CHUBU ELECTRIC POWER CO INC;INTERNATL SUPERCONDUCTIVITY TECHNOLOGY CENTER |
发明人 |
SUGA TOSHIHIRO;YAMADA YASUSHI;HIRABAYASHI IZUMI |
分类号 |
C30B29/22;C30B17/00;C30B19/04;H01L21/208;(IPC1-7):C30B29/22 |
主分类号 |
C30B29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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