发明名称 POSITIVE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in resolution and exposure margin, which can be suitably used for microphotofabrication using far-UV rays, particularly ArF excimer laser light. SOLUTION: The positive resist composition contains (A) a specified resin which has aliphatic cyclic hydrocarbon groups and increases the dissolving rate with respect to an alkali developer by the effect of an acid and (B) a specified compound which produces an acid by irradiation with active rays or radiation.
申请公布号 JP2002341539(A) 申请公布日期 2002.11.27
申请号 JP20010149620 申请日期 2001.05.18
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO
分类号 G03F7/039;C08F220/10;C08F232/00;C08F234/00;C08K5/16;C08K5/34;C08K5/36;C08L33/04;C08L45/00;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址