发明名称 |
POSITIVE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in resolution and exposure margin, which can be suitably used for microphotofabrication using far-UV rays, particularly ArF excimer laser light. SOLUTION: The positive resist composition contains (A) a specified resin which has aliphatic cyclic hydrocarbon groups and increases the dissolving rate with respect to an alkali developer by the effect of an acid and (B) a specified compound which produces an acid by irradiation with active rays or radiation. |
申请公布号 |
JP2002341539(A) |
申请公布日期 |
2002.11.27 |
申请号 |
JP20010149620 |
申请日期 |
2001.05.18 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SATO KENICHIRO;KODAMA KUNIHIKO |
分类号 |
G03F7/039;C08F220/10;C08F232/00;C08F234/00;C08K5/16;C08K5/34;C08K5/36;C08L33/04;C08L45/00;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|