| 摘要 |
<p>There are provided a semiconductor device including a photo receiving region having high photosensitivity by forming an antireflection film capable of both decreasing a reflectance and lowering a surface level density, and a manufacturing method of the semiconductor device. The semiconductor device includes an antireflection film 8 comprised of a laminated film including a first insulating film 6 formed on the surface of a silicon substrate 1 and a second insulating film 7 having a refractive index different from that of the first insulating film 6 formed above the first insulating film in a light-receiving area 10 of a semiconductor photo receiving region PD, and in which the first insulating film 6 is comprised of a silicon oxide film formed by oxidizing silicon on the surface of the semiconductor photo receiving region PD. Further, the semiconductor photo receiving region PD has a configuration such that it may receive light having a wavelength 500nm or less. Furthermore, when this semiconductor device is manufactured, in the state in which the silicon surface which serves as a light-receiving portion of the photodiode PD is exposed, the silicon oxide film 6 is formed by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800 DEG C or more. <IMAGE></p> |
