| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal infrared detector array excellent in sensitivity and low in the thermal capacity of a detector, easy to manufacture with little wiring difference in level on the detector, and stable in performance. SOLUTION: This thermal infrared detector array has two or more thermal infrared detectors 4 arranged on an SOI substrate, a signal reading circuit arranged around it, and signal reading wires 8 for transmitting an electric signal from the individual infrared detectors 4 to the signal reading circuit. Two or more silicon elements 18 changing the electric characteristic by temperature are arranged on the detector 4, and the silicon element are mutually connected through an element connecting wire 5. The element connecting wire comprises a thin film 2-layer wire comprising a first conductive layer of a silicide-formable metal and a second conductive layer of a conductive material capable of preventing the diffusion of the metal to Si laminated thereon. The signal reading wire 8 comprises a third conductive layer of a metal of electric good conductor formed on the thin film two-layer wire.
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